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2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications * * * High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 95 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB Pc Tj Tstg Rating 120 100 50 9 5 10 0.5 1 20 150 -55 to 150 Unit V V V A A W C C JEDEC JEITA TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25C) Characteristic Collector cutoff current Emitter cutoff current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = 120 V, IE = 0 VEB = 9 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.6 A IC = 1.6 A, IB = 32 mA IC = 1.6 A, IB = 32 mA See Figure 1. VCC 24 V, RL = 15 - IB1 = 32 mA, IB2 = - 53 mA Min 50 400 200 Typ. 60 500 95 Max 100 100 1000 0.22 1.10 ns V V Unit nA nA V 1 2005-02-28 2SC5886A VCC 20 s IB1 Input IB2 IB2 Duty cycle < 1% IB1 RL Output Figure 1 Switching Time Test Circuit & Timing Chart Marking C5886A Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-28 2SC5886A IC - VCE 6 70 50 40 30 20 4 Common emitter Tc = 25C Pulse test 10 10000 Common emitter VCE = 2 V Pulse test hFE - IC Collector current IC (A) hFE 1000 Tc = 100C 25 -55 5 2 2 IB = 1 mA DC current gain 10 100 0 0 2 4 6 8 10 0.001 0.01 0.1 1 10 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) - IC 10 Common emitter 10 Common emitter IC/IB = 50 Pulse test VBE (sat) - IC Collector-emitter saturation voltage VCE (sat) (V) 1 Base-emitter saturation voltage VBE (sat) (V) IC/IB = 50 Pulse test 1 25 -55 0.1 Tc = 100C -55 Tc = 100C 25 0.01 0.001 0.01 0.1 1 10 0.1 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC - VBE 5 Common emitter VCE = 2 V Pulse test 10 VCE - IB Common emitter Tc = 25C Pulse test 4 Collector current IC (A) VCE 3 (V) 1 3 2 1.6 0.1 IC = 1 A 2 Tc = 100C -55 25 1 0 0 Collector-emitter voltage 1.2 1.6 0.4 0.8 0.01 0.001 0.01 0.1 1 10 Base-emitter voltage VBE (V) Base current IB (A) 3 2005-02-28 2SC5886A Transient thermal resistance (junction-case) rth (j-c) (C/W) rth(j-c) - tw 10 Tc = 25C Infinite heat sink Curves apply only to limited areas of thermal resistance 1 0.001 (single nonrepetitive pulse). 0.01 0.1 1 10 Pulse width tw (s) Safe operating area 100 10 IC max (pulse)* 100 s* 10 s* Collector current IC (A) IC max (continuous)* 10 ms* 1 100 ms* DC operation Tc = 25C 1 ms* 0.1 *: Single pulse Tc = 25C Curves must be derated linearly with increase in temperature 1 10 0.01 0.1 VCEO max 100 Collector-emitter voltage VCE (V) 4 2005-02-28 2SC5886A RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-28 |
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